Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures - CMNE
Article Dans Une Revue Journal of Vacuum Science and Technology Année : 2009

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

Résumé

This work presents an original approach to model direct tunneling current through high-κ dielectrics including SiO2 interfacial oxide from electron inversion layers. Quantum confinement is taken into account by means of an improved triangular well approximation including physically-based analytical corrections of subband energy levels. An efficient way to compute tunnel transmission probability is also proposed, taking into account the reflections on discontinuous dielectrics interfaces. Finally, this model has been successfully validated by comparison to both numerical simulations and experimental results.
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Dates et versions

hal-00596105 , version 1 (02-05-2023)

Identifiants

Citer

J. Coignus, R. Clerc, Cédric Leroux, G. Reimbold, G. Ghibaudo, et al.. Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures. Journal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩. ⟨hal-00596105⟩
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